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Semi-Insulating , Epi-Ready Gallium Arsenide Substrate, 6”, Prime Grade

Categories GaAs Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name: Prime Grade GaAs Wafer
Wafer Diamter: 6 inch
Conduction Type: Semi-insulating
Grade: Prime Grade
usage: Microelectronics
keyword: Gallium Arsenide Substrate Wafer
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    Semi-Insulating , Epi-Ready Gallium Arsenide Substrate, 6”, Prime Grade

    Semi-Insulating , Epi-Ready Gallium Arsenide Substrate, 6”, Prime Grade


    PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.


    (6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

    ItemSpecificationsRemarks
    Conduction Type

    Semi-insulating

    Growth MethodVGF
    DopantUndoped
    TypeN
    Diamater(mm)150±0.25
    Orientation

    (100)0°±3.0°

    NOTCH Orientation〔010〕±2°
    NOTCH Deepth(mm)(1-1.25)mm 89°-95°
    Carrier Concentration

    N/A

    Resistivity(ohm.cm>1.0×107 or 0.8-9 x10-3
    Mobility(cm2/v.s)N/A
    Dislocation

    N/A

    Thickness(µm)

    675±25

    Edge Exclusion for Bow and Warp(mm)N/A
    Bow(µm)N/A
    Warp(µm)

    ≤20.0

    TTV(µm)≤10.0
    TIR(µm)≤10.0
    LFPD(µm)

    N/A

    PolishingP/P Epi-Ready

    Properties of GaAs Crystal

    PropertiesGaAs
    Atoms/cm34.42 x 1022
    Atomic Weight144.63
    Breakdown Fieldapprox. 4 x 105
    Crystal StructureZincblende
    Density (g/cm3)5.32
    Dielectric Constant13.1
    Effective Density of States in the Conduction Band, Nc (cm-3)4.7 x 1017
    Effective Density of States in the Valence Band, Nv (cm-3)7.0 x 1018
    Electron Affinity (V)4.07
    Energy Gap at 300K (eV)1.424
    Intrinsic Carrier Concentration (cm-3)1.79 x 106
    Intrinsic Debye Length (microns)2250
    Intrinsic Resistivity (ohm-cm)108
    Lattice Constant (angstroms)5.6533
    Linear Coefficient of Thermal Expansion,6.86 x 10-6
    ΔL/L/ΔT (1/deg C)
    Melting Point (deg C)1238
    Minority Carrier Lifetime (s)approx. 10-8
    Mobility (Drift)8500
    (cm2/V-s)
    µn, electrons
    Mobility (Drift)400
    (cm2/V-s)
    µp, holes
    Optical Phonon Energy (eV)0.035
    Phonon Mean Free Path (angstroms)58
    Specific Heat0.35
    (J/g-deg C)
    Thermal Conductivity at 300 K0.46
    (W/cm-degC)
    Thermal Diffusivity (cm2/sec)0.24
    Vapor Pressure (Pa)100 at 1050 deg C;
    1 at 900 deg C

    WavelengthIndex
    (µm)
    2.63.3239
    2.83.3204
    33.3169
    3.23.3149
    3.43.3129
    3.63.3109
    3.83.3089
    43.3069
    4.23.3057
    4.43.3045
    4.63.3034
    4.83.3022
    53.301
    5.23.3001
    5.43.2991
    5.63.2982
    5.83.2972
    63.2963
    6.23.2955
    6.43.2947
    6.63.2939
    6.83.2931
    73.2923
    7.23.2914
    7.43.2905
    7.63.2896
    7.83.2887
    83.2878
    8.23.2868
    8.43.2859
    8.63.2849
    8.83.284
    93.283
    9.23.2818
    9.43.2806
    9.63.2794
    9.83.2782
    103.277
    10.23.2761
    10.43.2752
    10.63.2743
    10.83.2734
    113.2725
    11.23.2713
    11.43.2701
    11.63.269
    11.83.2678
    123.2666
    12.23.2651
    12.43.2635
    12.63.262
    12.83.2604
    133.2589
    13.23.2573
    13.43.2557
    13.63.2541

    What is the GaAs Process?

    GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.


    What is the Thermal properties of GaAs Wafer?

    Bulk modulus7.53·1011 dyn cm-2
    Melting point1240 °C
    Specific heat0.33 J g-1°C -1
    Thermal conductivity0.55 W cm-1 °C -1
    Thermal diffusivity0.31cm2s-1
    Thermal expansion, linear5.73·10-6 °C -1

    Temperature dependence of thermal conductivity
    n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018;
    p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019.
    Temperature dependence of thermal conductivity (for high temperature)
    n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018;
    p-type sample, po (cm-3): 5. 6·1019.
    Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1.
    N is the number of atoms in 1 g og GaAs.
    Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K.
    Temperature dependence of linear expansion coefficient α

    Melting pointTm=1513 K
    For 0 < P < 45 kbarTm= 1513 - 3.5P (P in kbar)
    Saturated vapor pressure(in Pascals)
    1173 K1
    1323 K100

    Are You Looking for GaAs Wafer?

    PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

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