InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work
![]() |
InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP-based FP...
SHANGHAI FAMOUS TRADE CO.,LTD
|
FP Fabry-Perot Epiwafer InP Substrate Dia 2 3 4 6 Inch Thickness 350-650um InGaAs Doping
![]() |
FP(Fabry-Perot)) Epiwafer InP substrate dia 2 3 4 6 inch thickness:350-650um InGaAs doping FP(Fabry-Perot)) Epiwafer InP substrate's abstract Fabry-Perot (FP) Epiwafer on Indium Phosphide (InP) substrates is a critical component in the fabrication of high-performance optoelectronic devices, particularly laser diodes used in optical communication systems. The InP......
SHANGHAI FAMOUS TRADE CO.,LTD
|
Submit your “350 650um inp fp epiwafer” inquiry in a minute :