FP Fabry-Perot Epiwafer InP Substrate Dia 2 3 4 6 Inch Thickness 350-650um InGaAs Doping
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...Epiwafer InP substrate dia 2 3 4 6 inch thickness:350-650um InGaAs doping FP(Fabry-Perot)) Epiwafer InP substrate's abstract Fabry-Perot (FP) Epiwafer on Indium Phosphide (InP) substrates is a critical component in the fabrication of high-performance optoelectronic devices, particularly laser diodes used in optical communication systems. The InP substrate......
SHANGHAI FAMOUS TRADE CO.,LTD
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InP FP Epiwafer InP Substrate N/p Type 2 3 4 Inch With Thickeness Of 350-650um For Optical Net Work
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InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP......
SHANGHAI FAMOUS TRADE CO.,LTD
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Semi-Insulating , InP Substrate , 2”, Test Grade -Powerway Wafer
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...diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade,...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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