IGBT Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge
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IGBT Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge Detailed Description Of FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles.The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Product Attributes Of FS03MR12A6MA1BBPSA1 Part Number: FS03MR12A6MA1BBPSA1 FET Type: 6 N-Channel......
ShenZhen Mingjiada Electronics Co.,Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor
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Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range......
Reasunos Semiconductor Technology Co., Ltd.
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Inverter IGBT With SiC Mosfet For Brushless Motors And Lithium Battery Management
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Inverter IGBT With SiC Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and ......
Guangdong Lingxun Microelectronics Co., Ltd
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High Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package
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...MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT......
Sunbeam Electronics (Hong Kong) Limited
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ......
Shenzhen ATFU Electronics Technology ltd
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JUYI JY213H BLDC Motor Driver MOSFET / IGBT Driver High Speed 3 - Phase Half - Bridge
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...h three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection......
Shanghai Juyi Electronic Technology Development Co., Ltd
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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor
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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ......
Anterwell Technology Ltd.
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ......
ChongMing Group (HK) Int'l Co., Ltd
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JY213H SOP20 BLDC Motor Driver MOSFET / IGBT Driver High Speed High Voltage 3-Phase Gate Driver
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Descriptions: The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown......
Changzhou Junqi International Trade Co.,Ltd
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