Sign In | Join Free | My howtoaddlikebutton.com |
|
Categories | Integrated Circuit Chips |
---|---|
Model Number: | 74HC04N |
Certification: | new & original |
Place of Origin: | original factory |
MOQ: | 10pcs |
Price: | Negotiate |
Payment Terms: | T/T, Western Union, Paypal |
Supply Ability: | 6900pcs |
Delivery Time: | 1 day |
Packaging Details: | Please contact me for details |
Description: | Inverter IC 6 Channel 14-PDIP |
supply voltage: | −0.5 to +7.0 V |
input diode current: | ±20 mA |
output diode current: | ±20 mA |
output source or sink current: | ±25 mA |
VCC or GND current: | ±50 mA |
storage temperature: | −65 to +150 °C |
74HC04; 74HCT04
Hex inverter
FEATURES
• Complies with JEDEC standard no. 8-1A
• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
SYMBOL | PARAMETER | CONDITIONS | TYPICAL | UNIT | |
HC04 | HCT04 | ||||
tPHL/tPLH | propagation delay nA to nY | CL = 15 pF; VCC = 5 V | 7 | 8 | ns |
CI | input capacitance | 3.5 | 3.5 | pF | |
CPD | power dissipation capacitance per gate | notes 1 and 2 | 21 | 24 | pF |
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For 74HC04: the condition is VI = GND to VCC.
For 74HCT04: the condition is VI = GND to VCC − 1.5 V.
Fig.1 Pin configuration DIP14, SO14 and (T)SSOP14.
Fig.2 Pin configuration DHVQFN14. Fig.3 Logic symbol.
Fig.4 IEC logic symbol. Fig.5 Logic diagram (one inverter).
![]() |