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| Categories | Single Bipolar Transistors |
|---|---|
| Description: | Bipolar (BJT) Transistor PNP 100V 8A 4MHz 1.75W Surface Mount TO-252 |
| Mfr. Part #: | MJD127D |
| Model Number: | MJD127D |
| Package: | TO-252 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested for robust device performance and reliable operation. The lead is formed for surface mount applications.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (Ta=25) | ||||||
| VCBO | Collector-Base Voltage | -100 | V | |||
| VCEO | Collector-Emitter Voltage | -100 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current-Continuous | -8 | A | |||
| PC | Total Power Dissipation @ Ta=25 | 1.75 | W | |||
| PC | Collector Power Dissipation | TC=25 | 20 | W | ||
| Rth j-a | Thermal Resistance, Junction to Ambient | 71.4 | /W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | ~ | 150 | ||
| ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified) | ||||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -100 | V | ||
| VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC=-4A; IB= -16mA | -2.0 | V | ||
| VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC=-8A; IB= -80mA | -4.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC=-8A; IB= -80mA | -4.5 | V | ||
| VBE(ON) | Base-Emitter voltage | IC= -4A; VCE= -4V | -2.8 | V | ||
| ICEO | Collector Cutoff Current | VCE=-50V; IE= 0 | -10 | uA | ||
| IEBO | Emitter Cutoff Current | VEB=-5V; IC= 0 | -2 | mA | ||
| hFE1 | DC Current Gain | IC= -4A; VCE=- 4V | 1000 | 12000 | ||
| hFE2 | DC Current Gain | IC=-8A; VCE= -4V | 100 | |||
| fT | Current-GainBandwidth Product | IC=-3A; VCE= -4V | 4 | MHz | ||
| COB | Output Capacitance | IE=0; VCB= -10V; f= 1.0MHz | 300 | pF | ||
|
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