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Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design

Categories Single, Pre-Biased Bipolar Transistors
Emitter-Base Voltage VEBO: 5V
Input Resistor: 2.86kΩ
Resistor Ratio: 5
Collector - Emitter Voltage VCEO: 50V
Description: Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23
Mfr. Part #: PDTB123YT,215
Model Number: PDTB123YT,215
Package: SOT-23
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Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design

Product Overview

The Nexperia PDTB123YT is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It offers a 500 mA output current capability and features built-in bias resistors (R1 = 2.2 k, R2 = 10 k) that simplify circuit design and reduce component count. This device serves as a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Resistor-Equipped Transistor (RET)
  • Package Type: SOT23 (TO-236AB)
  • Complementary NPN: PDTD123YT

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
VCEOCollector-emitter voltageopen base---50V
IOOutput current---500mA
R1Bias resistor 1 (input)1.542.22.86k
R2/R1Bias resistor ratioTamb = 25 C4.14.555
VCBOCollector-base voltageopen emitter---50V
VEBOEmitter-base voltageopen collector---5V
VIInput voltagepositive-5-V
VIInput voltagenegative--20-V
PtotTotal power dissipationTamb 25 C--250mW
TjJunction temperature--150C
TambAmbient temperature-65-150C
TstgStorage temperature-65-150C
Rth(j-a)Thermal resistance from junction to ambientin free air [1]--500K/W
ICBOCollector-base cut-off currentVCB = -40 V; IE = 0 A; Tamb = 25 C---100nA
ICEOCollector-emitter cut-off currentVCB = -50 V; IE = 0 A; Tamb = 25 C---100nA
ICEOCollector-emitter cut-off currentVCE = -50 V; IB = 0 A; Tamb = 25 C---0.5A
IEBOEmitter-base cut-off currentVEB = -5 V; IC = 0 A; Tamb = 25 C---0.65mA
hFEDC current gainVCE = -5 V; IC = -50 mA; Tamb = 25 C70--
VCEsatCollector-emitter saturation voltageIC = -50 mA; IB = -2.5 mA; Tamb = 25 C---300mV
VI(off)Off-state input voltageVCE = -5 V; IC = -100 A; Tamb = 25 C-0.4-0.6-1V
VI(on)On-state input voltageVCE = -0.3 V; IC = -20 mA; Tamb = 25 C-0.5-1-1.4V
CcCollector capacitanceVCB = -10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C-11-pF

2410121943_Nexperia-PDTB123YT-215_C454996.pdf

Quality Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design for sale
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