1m 4 banks 16 bits sdram

Brand Name:Winbond

Model Number:W9864G6KH-6I

Place of Origin:CN

W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory Product Specifications Part Number Speed Grade Self Refresh Current (...

Brand Name:ISSI

Model Number:IS42S16400F-6TL

...16 Bit Product Range Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL DRAM 64M, 3.3v, SDRAM, 4Mx16 16 bit App Characteristics Clock frequency: 200, 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank...

Brand Name:SAMSUNG

Model Number:K4AAG165WA-BCWE

Place of Origin:Original

...SDRAM 16Gbit 1Gx16 1.2V 96-Pin FBGA ECCN (US) EAR99 Part Status Active HTS 8542.32.00.36 Automotive No PPAP No DRAM Type DDR4 SDRAM Chip Density (bit) 16G Organization 1Gx16 Number of Internal Banks 16 Number of Words per Bank 64M Number of Bits/Word (bit) 16 Data Bus Width (bit) 16...

Brand Name:Original Factory

Model Number:W631GU6MB-11

Place of Origin:CN

...SDRAM Memory Product Description Of W631GU6MB-11 W631GU6MB-11 is a 1G bits DDR3L SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 2133 MT/s (DDR3L-2133) for various applications. Specifications Of W631GU6MB-11 Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 1Gbit Memory Organization 64M x 16...

Brand Name:Winbond Electronics

Model Number:W9725G6KB-25

Place of Origin:TAIWAN

...DRAM ic Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA 1. GENERAL DESCRIPTION The W9725G6KB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words  4 banks  16 bits. This device achieves high ...

Brand Name:MICRON

Model Number:MT46V16M16P-75:F

Place of Origin:CHINA

... of Words per Bank 4M Number of Bits/Word (bit) 16 Data Bus Width (bit) 16 Maximum Clock Rate (MHz) 266 Maximum Access Time (ns) 0.75 Address Bus Width (bit) 15 Process Technology CMOS Interface Type SSTL_2 Minimum Operating Supply Voltage (V)

Brand Name:ISSI

Model Number:IS42S16400J-7TLI

Place of Origin:Original Factory

IS42S16400J-7TLI 54-TSOP ISSI Original SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz Description ISSI's 64Mb Synchronous DRAM is organized as1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer ...

Brand Name:ISSI

Model Number:IS42S16400J-7TLI

Place of Origin:Original Factory

IS42S16400J-7TLI 54-TSOP ISSI Original SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz Description ISSI's 64Mb Synchronous DRAM is organized as1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer ...

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K4M561633G-BN75

Quick Detail: 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Description: The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. ...

Brand Name:Micron Technology Inc.

Model Number:MT47H16M16BG-37E:B TR

...SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Duplicate output strobe (RDQS) option for x8 • DLL to align DQ and DQS transitions with CK • 8 internal banks...

Brand Name:MICRON

Model Number:MT48LC4M16A2TG

Place of Origin:Original

...banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 16,777,216-bit banks...

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power CMOS process. Features:

Brand Name:original

Model Number:MT40A512M16HA-083E:A

Place of Origin:original

...SDRAM - DDR4 SMD/SMT Tray • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC temperature range: – 64ms at -40°C to 85°C – 32ms at >85°C to 95°C – 16ms at >95°C to 105°C • 16 internal banks (x4, x8): 4 groups of 4 banks each • 8 internal banks (x16): 2 groups of 4 banks each • 8n-bit...