automatic timer switch circuit

Model Number:HYG020N06LS1B

Product Overview The HYG020N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a low on-resistance (RDS(ON) = 2 m typ. at VGS = 10V), high continuous drain current (250A), and is 100% avalanche tested...

Model Number:15N10

Product Overview The 15N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching and DC/DC ...

Model Number:HYG065N15NS1P

Product Overview The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features low on-resistance (RDS(ON)=6.2m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged ...

Model Number:SI1032R-T1-GE3-HXY

Product Overview The SI1032R-T1-GE3 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V...

Model Number:MBRF20200CT

Product Overview The MBRF200CT is a SBD Schottky Barrier Diode optimized for low forward voltage and low reverse leakage current. It is designed for high-frequency switched-mode power supplies, offering high ESD capability, 150 operating junction ...

Model Number:SPT30U120SK2

Product Overview The SPT30U120SK2 is a FRED Ultrafast Soft Recovery Diode designed for high-frequency power conditioning systems. It offers reduced losses and EMI/RFI, with soft recovery characteristics providing a buffer in most applications. This diode...

Model Number:BC849CW

Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models (BC846W, BC847W, BC848W, BC849W, BC850W) with varying voltage and current ratings. Product Attributes Type...

Model Number:S9015

Product Overview The S9015 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It serves as a complementary device to the S9014 transistor and is housed in a compact SOT-23 package. This ...

Model Number:MMBT3904T

Product Overview The MMBT3904T is a high diode semiconductor transistor in a SOT-523 plastic-encapsulated package. It is an NPN transistor complementary to the MMBT3906T and offers a small package size. This transistor is suitable for various electronic ...

Model Number:2SA1744

Product Overview The ISC 2SA1744 is a Silicon PNP Power Transistor designed for high-speed switching applications. It features high DC current gain (hFE) at low saturation voltage (VCE(sat)), making it ideal for use as a driver in DC/DC converters and ...

Model Number:BC817

Product Overview This NPN transistor, identified by the marking '6C' and model BC817-40, is a general-purpose semiconductor device designed for various electronic applications. It offers a continuous collector current of 0.5A and a collector dissipation...

Model Number:BC847,215

Product Overview The Nexperia BC847x series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering thr...

Model Number:CDBA140SL-HF

Product Overview The CDBA140SL-HF is a Super Low VF SMD Schottky Barrier Rectifier designed for ultra-high-speed switching applications. It offers low power loss, high efficiency, and high current capability with a low forward voltage drop, making it ideal...

Model Number:ES1J

Product Overview The ES1A through ES1J series are super fast recovery rectifier diodes designed for high-speed switching applications. They offer high surge current capability and are suitable for general rectifier use.Product Attributes Brand: JIANGSU ...

Model Number:BAS40DW-04

Product Overview The BAS40TW/DW series are Schottky barrier diode arrays designed for low forward voltage drop and fast switching characteristics. They are suitable for various electronic applications requiring efficient rectification and signal processing...

Model Number:MMDT3904DW

MMDT3904DW Epitaxial planar die construction. Ideal for low power amplification and switching applications. Product Attributes Brand: Not specified Origin: Not specified Material: Plastic-Encapsulate Color: Not specified Certifications: Not specified ...

Model Number:TIP32C

Product Overview The JSMICRO Semiconductor TIP32/32A/32B/32C are PNP Power Transistors designed for medium power linear and switching applications. They are complementary to the TIP31/31A/31B/31C series and come in a TO-220 package.Product Attributes Brand...

Model Number:LMBT3904LT1G

Product Overview The LMBT3904LT1G is a general-purpose transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It features a SOT-23 package and offers a range of electrical characteristics suitable for amplification and ...

Model Number:MMDT2227

Product Overview The MMDT2227 is a dual transistor featuring an epitaxial planar die construction, offering a complementary pair of NPN (2222A-Type) and PNP (2907A-Type) transistors. This device is ideal for low-power amplification and switching ...

Model Number:TPAL0220F200RK9

Product Overview The TPAL1331 is a planar non-inductive power resistor designed to address customer design and manufacturing challenges in various electronic applications. It features a TO-220 package with an integrated flange for enhanced heat dissipation...