bipolar transistor 350mw

Brand Name:original

Model Number:BCY71

Place of Origin:original

BCY71 Through Hole Bipolar Transistors - BJT TRANS BIPOLAR SMALL SIGNAL DESCRIPTION The BCY70, BCY71 & BCY72 are silicon planar epitaxial PNP tranistors in Jedec TO18 metal case. FAQ Q: Can you accept small order? A: Yes,small order is available .Please ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ...

Brand Name:ON Semiconductor

Model Number:MMBT2907ALT1G

Place of Origin:China

...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/...

Brand Name:Diodes Incorporated

Model Number:ZXTP19100CGTA

Place of Origin:GERMANY

ZXTP19100CGTA Diodes Incorporated Bipolar Transistors 1. Features BVCEO > -100V BVECO > -7V IC = -2AHigh Continuous Current Low Saturation VoltageVCE(sat) < -130mV @ -1ARCE(sat) =100mΩ Complementary NPNType:ZXTN19100CG Lead-Free Finish; RoHS Compliant (...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply ...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...

Brand Name:onsemi

Model Number:BCP56-16T1G

Place of Origin:China

... is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V

Brand Name:Huixin

Model Number:BC3400

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Maximum ratings...

Categories:Bipolar Transistor Arrays, Pre-Biased

Country/Region:china

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 80V 100mA 170MHz, 150MHz 350mW Surface Mount 6-TSSOP

Brand Name:Nexperia

Model Number:MMBZ20VAL-QR

Place of Origin:USA

... x 1mm package. This mainstay package in semiconductors was introduced in 1969 and quickly became an industry standard. The SOT23 encapsulates an extensive range of diodes, bipolar transistors, MOSFETs, and ESD protection

Brand Name:ABB

Model Number:FS300R17KE3/AGDR-76C

Place of Origin:Switzerland

... Code 85389091 Dimension 16cm*16cm*12cm Weight 0.8kg The ABB FS300R17KE3AGDR-76C is a powerful combination of an Insulated-Gate Bipolar Transistor (IGBT) module and a drive unit, designed for industrial applications

Brand Name:HT

Model Number:KBP310

Place of Origin:China

... BRIDGE, HIGH EFFICIENCY RECTIFIER BRIDGE, SCHOTTKY BRIDGE, SMALL SIGNAL SCHOTTKY DIODES, POWER BRIDGES, ZENER DIODES, BIPOLAR TRANSISTORS, MOSFETS, TRIODE, BI-DIRECTIONAL TRIGGER DIODES, SWITCHING DIODES,