memory ic programmer

Place of Origin:USA

Brand Name:XILINX

Model Number:XC6SLX45T-3FGG484C

...Memory IC XC6SLX45T-3FGG484C NEW AND ORIGINAL STOCK [Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic components sale and service for clients over 20 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC...

Brand Name:ATMEL

Model Number:ATTINY2313A-SU

Place of Origin:Original Factory

8-bit Microcontroller with 2/4K Bytes In-System Programmable Flash ATTINY2313A-SU Description The ATtiny2313A/4313 is a low-power CMOS 8-bit microcontroller based on the AVR enhanced RISC architecture. By executing powerful instructions in a single clock ...

Brand Name:OEM/ODM

Place of Origin:China

Model Number:MT47H64M16HR-3 AAT:H TR

... voltage of 2.7V to 5.5V, memory of 256B to 64KB, 2KV HBM ESD Protection, operating frequency from DC to 20MHz, and programming time from 10ms to 10s. It provides users with the flexibility and convenience of programming their own IC chip to meet their

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips​ Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4X Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 WT:B

Place of Origin:CN

... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word,

Brand Name:Original Factory

Model Number:S27KS0643GABHA020

Place of Origin:CN

... Of S27KS0643GABHA020 Part Number S27KS0643GABHA020 Memory Size 64Mbit Memory Organization 8M x 8 Memory Interface SPI - Octal I/O Clock Frequency 200 MHz Write Cycle Time - Word, Page 35ns Access Time ...

Brand Name:Original Factory

Model Number:MTFC64GAZAQHD-AAT

Place of Origin:CN

IC Chip MTFC64GAZAQHD-AAT Memory IC 512Gbit MMC 153-VFBGA Surface Mount Product Description Of MTFC64GAZAQHD-AAT MTFC64GAZAQHD-AAT NAND Flash memory array is programmed and read using page-based operations and is erased using block-based operations. Specification Of MTFC64GAZAQHD-AAT Part Number MTFC64GAZAQHD-AAT Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 512Gbit Memory Organization 64G x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT53E128M16D1DS-053 AAT:A

Place of Origin:CN

Memory IC Chip MT53E128M16D1DS-053 AAT:A 2Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E128M16D1DS-053 AAT:A MT53E128M16D1DS-053 AAT:A LPDDR4 Memory is optimized to address power consumption issues in battery operated applications. The LPDDR4 Memory combines performance, power, latency, and physical space that makes it energy-efficient. Specification Of MT53E128M16D1DS-053 AAT:A Memory Type Volatile Memory...

Brand Name:Original Factory

Model Number:TH58NVG2S3HAI0

Place of Origin:CN

Memory IC Chip TH58NVG2S3HAI0 4Gbit SLC NAND Flash Memory IC TSOP-48 Product Description Of TH58NVG2S3HAI0 SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data. For long-lasting products or systems working with extremely high data throughput between the host and the memory, SLC is a suitable solution. Specification Of TH58NVG2S3HAI0 Memory Size 4Gbit Memory

Brand Name:Original Factory

Model Number:CY62167G30-45ZXI

Place of Origin:CN

...Memory IC Chip 16Mbit Paralle Asynchronous SRAM Memory IC TSOP-48​ Product Description Of CY62167G30-45ZXI CY62167G30-45ZXI is a high performance CMOS Low Power (MoBL®) SRAM devices. The device supports single- and dual-chip enable options and multiple pin configurations. Specification Of CY62167G30-45ZXI Series MOBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 16Mbit Memory...

Place of Origin:CN

Brand Name:Original Factory

Model Number:S25FS512SAGBHM210

S25FS512SAGBHM210 Memory IC Chip Memories TBGA24 FS-S Series Memory NOR Flash Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:TI

Model Number:SN74LVC2G241DCUR

SN74LVC2G241DCUR Programmable Logic ICS Buffers & Line Drivers Tri-State Dual 1 Features Available in the Texas Instruments NanoFreeTM Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Maxtpd of4.1nsat3.3V Low Power Consumption, 10-μA ...

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT28F800B5WP-8T

Quick Detail: FLASH MEMORY Description: The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 ...

Brand Name:Original Factory

Model Number:S29GL032N90TFI030

Place of Origin:CN

S29GL032N90TFI030 Memory IC Chip 32Mbit Parallel NOR Flash Memory IC TSOP-48​ Product Description Of S29GL032N90TFI030 S29GL032N90TFI030 - 32Mbit Parallel NOR Flash Memory IC, TSOP-48 S29GL032N90TFI030 is 3.0-Volt single-power Flash memory manufactured ...

Brand Name:Original Factory

Model Number:MX29GL512GDT2I-11G

Place of Origin:CN

MX29GL512GDT2I-11G Memory IC Chip 512Mbit NOR Flash Memory IC TSOP-56 Package Product Description Of MX29GL512GDT2I-11G MX29GL512GDT2I-11G is 512Mbit NOR Flash Memory IC,the Package is TSOP-56. Specification Of MX29GL512GDT2I-11G Memory Size: 512 Mbit ...

Brand Name:Original Factory

Model Number:THGBMNG5D1LBAIL

Place of Origin:CN

THGBMNG5D1LBAIL Memory IC Chip 4 GB eMMC Memory IC FBGA-153 Package Product Description Of THGBMNG5D1LBAIL THGBMNG5D1LBAIL is 4 GB eMMC Memory IC,the package is FBGA-153. Specifications Of THGBMNG5D1LBAIL Package/Case: FBGA-153 Memory Size: 4 GB Minimum ...

Brand Name:Original Factory

Model Number:MTFC32GAZAQHD-WT

Place of Origin:CN

... form-factor applicationseets IoT, automotive and emerging embedded application demands. Specification Of MTFC32GAZAQHD-WT Part Number MTFC32GAZAQHD-WT Memory Size 256Gbit Memory Organization 32G x 8 Memory Interface MMC Clock Frequency 200 MHz Features Of

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is