sbd device sic substrate

Brand Name:ZMSH

Model Number:Semi-Insulating SiC

Place of Origin:China

...SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices. Key features of the 4-H Semi-Insulating SiC

Brand Name:ZMKJ

Model Number:2inch*0.625mmt

Place of Origin:CHINA

...SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices...

Brand Name:ZMSH

Model Number:SiC 6H-P

Place of Origin:CHINA

... composed of silicon (Si) and carbon (C), which has unique physical and chemical properties. 6H-SiC is a polytype of silicon carbide with hexagonal structure and a band gap width of 3.02 eV, which exhibits specific electrical and thermal properties. ...

Brand Name:ZMKJ

Model Number:8inch sic wafers 4h-n

Place of Origin:CHINA

...Substrate / Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers About Silicon Carbide (SiC...

Brand Name:zmsh

Model Number:6inch sic

Place of Origin:china

silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Mohs ...

Brand Name:ZMSH

Place of Origin:China

SiC seed wafer 8inch thickness 600±50um 4H type production grade for Silicon carbide crystal growth SiC seed wafer's abstract SiC seed wafers are critical in the production of high-quality silicon carbide (SiC) crystals. These wafers serve as substrates for the growth of SiC single crystals, used extensively in power electronics due to their superior thermal conductivity and high breakdown voltage. Production-grade SiC...

Brand Name:ZMSH

Model Number:4H-P SiC

Place of Origin:CHINA

...4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is ...

Brand Name:ZMSH

Model Number:4H-P SiC

Place of Origin:CHINA

...Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type...

Brand Name:ZMSH

Model Number:4H-P SiC

Place of Origin:CHINA

...-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and ...

Brand Name:ZMSH

... devices, particularly in high-power and high-frequency applications. SiC's superior thermal conductivity, high breakdown voltage, and wide bandgap make it an ideal choice for next-generation power electronics, especially in ...

Brand Name:ZMSH

Model Number:Crystal SiC

Place of Origin:CHINA

... innovation in the semiconductor industry, with dimensions up to 300 mm, much larger than traditional 6 or 8inch substrates. This increase in size means that more chips can be made on a single wafer, significantly increasing production efficiency and

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

SiC SBD with High Temperature Resistance and High Frequency *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Brand Name:Lingxun

Place of Origin:China

High-Performance Capabilities Silicon Carbide SBD For Consumer Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg...

Brand Name:ZMSH

Model Number:SICOI Wafers

Place of Origin:CHINA

... material that combines the exceptional physical properties of silicon carbide (SiC) with the electrical isolation advantages of an insulating layer (such as SiO₂ or Si₃N₄). The SICOI structure typically consists of a SiC single-crystal layer, an

Brand Name:ZMSH

Model Number:Semi-insulating SiC wafers 3inch

Place of Origin:China

...SiC substrate is a high-performance semiconductor material with a wide range of applications. It derives its name from its growth on the 4H crystal structure. This substrate exhibits exceptional electrical characteristics, including high resistivity and low carrier concentration, making it an ideal choice for radio frequency (RF), microwave, and power electronic devices. Key features of the 4-H Semi-Insulating SiC

Brand Name:ZMSH

Model Number:Crystal Seed SiC

Place of Origin:CHINA

Product Description: 2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon ...

Brand Name:zmsh

Model Number:Silicon Carbide

Place of Origin:China

2/4/6/8inch Sic Silicon Carbide Substrate 4H 6H 3C Type Support Customize Semiconductor Industry Multiple Sizes Product Description Silicon carbide substrate is a compound semiconductor single crystal material composed of carbon and silicon, which has the ...

Brand Name:ZMSH

Model Number:SiC 4H-P

Place of Origin:CHINA

Product Description: 2inch/4inch/6inch Sic Silicon Carbide Substrate 4H-P Type Off axis: 2.0° toward Production Grade Silicon carbide substrate 4H-P type refers to P-type (Positive-type) silicon carbide material with 4H crystal structure. Among them, "4H...

Brand Name:ZMKJ

Model Number:2inch SiC wafers

Place of Origin:CHINA

...sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafers production 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic Regarding Silicon Carbide(SiC...