sic photo diode

Model Number:C6D20065G

...20 A Silicon Carbide Schottky Diode Product Overview The Wolfspeed C6D20065G is a 650 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems. Leveraging SiC technology, this diode offers higher efficiency, faster...

Model Number:C6D10065G

...Diode Product Overview The Wolfspeed C6D10065G is a 650 V, 10 A Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems with improved efficiency, higher frequencies, and increased power densities. Leveraging the performance advantages of SiC technology, this diode...

Brand Name:HMT

Place of Origin:CHINA

SiC Ingots Supplier offer 6 inch SiC Substrate Homray Material Technology offersthe best price on the market for high quality SiC Ingots， SiC wafers. The major products are 4 inch 6 inch SiC Ingots andsubstrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode...

Model Number:C4D20120A

Product Overview The Wolfspeed C4D20120A is a 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode. Leveraging the performance advantages of SiC technology, this diode enables power electronics systems to achieve higher efficiency ...

Model Number:E4D02120E

...SiC) Schottky Barrier Diode designed to enhance the performance of power electronics systems. Leveraging SiC technology, it offers higher efficiency, faster switching frequencies, and improved power density compared to silicon-based solutions. These diodes...

Model Number:C3D08065A

...SiC) Schottky Barrier diode, model C3D08065A, offers superior performance compared to Silicon (Si)-based solutions, enabling power electronics systems to achieve higher efficiency standards, increased frequencies, and enhanced power densities. Its SiC Schottky Barrier diode...

Model Number:E4D20120A

...SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain greater power densities. The SiC diodes...

Brand Name:ZMSH

Model Number:Silicon Carbide

Place of Origin:China

... Silicon Carbide substrate wafers, but also provides innovative solutions for electronic devices with high power and high frequency, light emitting diode (LED). Light emitting diode (LED) is

Brand Name:Original Factory

Model Number:MSC010SDA170B

Place of Origin:CN

...SiC SBD in a TO-247 package. Specification Of MSC010SDA170B Part Number: MSC010SDA170B Technology: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io) (Per Diode): 31A Voltage - Forward (Vf) (Max) @ If: 1

Brand Name:Original Factory

Model Number:MSC050SDA120BCT

Place of Origin:CN

...lead TO-247 package. Specification Of MSC050SDA120BCT Part Number MSC050SDA120BCT Technology SiC (Silicon Carbide) Schottky Voltage - Forward (Vf) (Max) @ If 1.8 V @ 50 A Speed No Recovery Time > 500mA (Io) Reverse Recovery ...

Model Number:C6D20065G-TR

... increased power density compared to traditional silicon-based solutions. Its SiC technology offers a low forward voltage drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent ...

Model Number:C6D20065A

... Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems with higher efficiency, increased switching frequencies, and improved power densities compared to traditional silicon-based solutions. Its SiC technology offers a ...

Model Number:C6D20065H

...Carbide (SiC) Schottky Barrier diode offers significant performance advantages over silicon-based solutions, enabling power electronics systems to achieve higher efficiency standards, increased frequencies, and greater power densities. Its SiC construction...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

SIC Wafer Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:MSCSM330AM15CD3NG

... leg SiC power module design with integrated anti-parallel SiC Schottky Barrier Diodes (SBD). This high-performance power module is engineered for demanding automotive applications requiring superior efficiency and reliability. MJD Advantage ...

Brand Name:Original Factory

Model Number:MSC2X50SDA170J

Place of Origin:CN

Rectifiers Diode Arrays MSC2X50SDA170J SIC Integrated Circuit Chip 1700V Dual Silicon Carbide​ Product Description Of MSC2X50SDA170J MSC2X50SDA170J SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight...

Country/Region:china

SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC...

Brand Name:Original Factory

Model Number:MSC2X51SDA170J

Place of Origin:CN

Diode Power Modules MSC2X51SDA170J Integrated Circuit Chip SOT-227-4 N-Channel​ Product Description Of MSC2X51SDA170J MSC2X51SDA170J is Dual Silicon Carbide Schottky Barrier Diodes, 1700 V, 50 A SiC SBD devices in a SOT-227 package. Specification Of MSC2X51SDA170J Part Number: MSC2X51SDA170J Product: Diode Power Modules Technology: SiC...

Brand Name:Original Factory

Model Number:FFSB0865B-F085

Place of Origin:CN

FFSB0865B-F085 Rectifiers Single Diodes TO-263-2 Automobile Chips 650V Schottky Diode​ Product Description Of FFSB0865B-F085 FFSB0865B-F085 is Silicon Carbide (SiC) Schottky Diodes, Positive Temperature Coefficient, Max Junction Temperature 175°C. ...

Brand Name:Original Factory

Model Number:FFSB0665B-F085

Place of Origin:CN

Automobile Chips FFSB0665B-F085 TO-263-2 Rectifiers Single Diodes 650V 8A Schottky Diode​ Product Description Of FFSB0665B-F085 FFSB0665B-F085 is Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650V, Surface Mount. The package is D²PAK-2 (TO-263-2). ...