static random access memory

Model Number:ZTE ZXJ10 PSTN

Place of Origin:China

Brand Name:Huawei

ZTE SMEM memory board for ZTE ZXJ10 SPC exchange switch Contact Us Central module (CM): located at the central position in networking, and connected with peripheral switching modules (simplified as PSM ) and remote switching modules (simplified as RSM). ...

Place of Origin:PHILIPPINE

Brand Name:ATMEL Corporation

Model Number:AT28C64-12PI

... Erasable and Programmable Read Only Memory with popular, easy to use features. The device is manufactured with Atmel’s reliable nonvolatile technology. Applications: •Fast Read Access Time - 120 ns •Fast Byte Write - 200 µs or 1 ms...

Brand Name:original

Model Number:S29AL032D90TFI040

Place of Origin:original

S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance – Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) – 200 nA Automatic Sleep mode current – 200 nA standby mode ...

Brand Name:original

Model Number:EDW4032BABG-70-F-R

Place of Origin:original

... = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 7–25 • Programmable WRITE latency: 4–7 • Programmable ...

Brand Name:original

Model Number:IS61LV2568L-10T

Place of Origin:original

...Async SRAM 3.3v FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Standby Current: 700µA (typ.) • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE...

Brand Name:original

Model Number:S29AL032D90TFI040

Place of Origin:original

S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance – Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) – 200 nA Automatic Sleep mode current – 200 nA standby mode ...

Brand Name:original

Model Number:EDW4032BABG-70-F-R

Place of Origin:original

... = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 7–25 • Programmable WRITE latency: 4–7 • Programmable ...

Brand Name:original

Model Number:IS61LV2568L-10T

Place of Origin:original

...Async SRAM 3.3v FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Standby Current: 700µA (typ.) • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE...

Brand Name:ATMEL

Model Number:AT29C256-70PC

Place of Origin:Original

AT29C256-70PC IC 256K 32K x 8 5-volt Only CMOS Flash Memory Features Fast Read Access Time – 70 ns 5-volt Only Reprogramming Page Program Operation – Single Cycle Reprogram (Erase and Program) – Internal Address and ...

Brand Name:MICRON

Model Number:MT46H32M16LFBF-6IT-C

Place of Origin:Thailand

... ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on

Model Number:AT29C040A-90PI

Place of Origin:original factory

4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory AT29C040A Features • Fast Read Access Time – 90 ns • 5-volt Only Reprogramming • Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – ...

Brand Name:Original Factory

Model Number:CY14E256LA-SZ45XI

Place of Origin:CN

...Memory IC 32-SOIC Surface Mount Product Description Of CY14E256LA-SZ45XI CY14E256LA-SZ45XI is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 KB. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. Specification Of CY14E256LA-SZ45XI Part Number CY14E256LA-SZ45XI Memory...

Brand Name:CYPRESS

Model Number:CY62137FV18LL-55BVXI

Place of Origin:original

...IC Chip Low Power Memory for High Performance Computing Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 2Mbit Memory Organization 128K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 55ns Access Time 55 ns ...

Brand Name:CYPRESS

Model Number:S29GL128P10TFI010

Place of Origin:original

...High Performance Reliable Memory Storage for All Your Needs Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mbit Memory Organization 16M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 100ns Access Time 100 ns...

Brand Name:KAIYU

Model Number:W4

Place of Origin:CHINA

... method: oscillometric method 2*99 memory storage Micro-USB power source/2*AAA battery Measuring range: static pressure: 0-290mmHg 0-39.9kPa Circumference of Wrist: 13.5~19.5 cm Pulse: 40-180 beats/min Accuracy: static pressure: Pulse:

Brand Name:Original Factory

Model Number:STM32H755BIT6

Place of Origin:CN

...memory Product Description Of STM32H755BIT6 STM32H755BIT6 offer three ADCs, two DACs, two ultra-low power comparators, a low-power RTC, a high-resolution timer, 12 general-purpose 16-bit timers, two PWM timers for motor control, five low-power timers, a true random...

Place of Origin:China

Brand Name:Infinites

Company Profile Infinites Tech, a subsidiary of CCFEX (China) LIMITED, is dedicated to the research and manufacturing of high-quality Computer memories solutions. The company specializes in the development of computer memory modules, SSD solid-state drives...