what is random access memory

Brand Name:Micron Technology Inc.

Model Number:MT46V64M8P-5B IT:J

Place of Origin:Multi-origin

...Support for SSTL_18, SSTL_15 and SSTL_12 I/O standards - Fast page mode for higher random read speeds - 100MHz burst read capability - Low power consumption - Lead Free and RoHS compliant How to buy >>> • Contact us by ...

Brand Name:Wisecard

Place of Origin:Shenzhen

... random number generation, in line with AIS31-P2 standard, ensuring that all transactions and information exchange are secure and protected. Memory security protection mechanism is a key feature of this Smart Card, allowing users to set access controls and

Brand Name:Wisecard

Place of Origin:Shenzhen

Product Description: The Smart Card product is a cutting-edge solution designed to meet a wide range of security and memory storage needs. With a main frequency of 72 MHz, this card offers high performance and efficiency for various applications. One of ...

Brand Name:CYPRESS

Model Number:FM25V01A-GTR

Place of Origin:original

... - High Performance Memory Chip Capacity Product Listing: Product Name: FM25V01A-GTR Integrated Circuit IC Chip Product Features: - Low-power serial F-RAM nonvolatile memory - 256 Kbit (32 Kbyte) of nonvolatile memory - Fast random read access: 20 ns - Low...

Brand Name:Wisecard

Place of Origin:Shenzhen

Product Description: Our Smart Card is equipped with a powerful 32-bit CPU that delivers lightning-fast processing speeds. This ensures that you can quickly and easily access your information without any delays or lag. Additionally, our Smart Card features...

Brand Name:Wisecard

Place of Origin:Shenzhen

Product Description: Featuring 2*16/32 Bit Timer and a 32-bit CPU, the Smart Card is able to deliver fast and efficient performance, making it ideal for use in a variety of applications. Additionally, the card supports memory security protection mechanism...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS41LV16100B-50KL

...048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit ...

Place of Origin:PHILIPPINE

Brand Name:Integrated Silicon Solution, Inc

Model Number:IS41LV16100B-60KL

... is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

...097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word. These features make the IS41C8205 and IS41LV8205 ideally suited for ...

Brand Name:Macronix

Model Number:MX29F400CTMI-90G

... and reliable read/write non-volatile random access memory. The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F400C T/B offers access time as

Brand Name:GE Fanuc

Model Number:IC752SPL014

Place of Origin:USA

... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive, is divided between the operating system and

Brand Name:Micron Technology Inc.

Model Number:MT48LC2M32B2P-6:G TR

..., CLK). Each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4016v1C-TI10

...Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte ...

Brand Name:Macronix

Model Number:MX29GL320EHT2I-70G

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-...

Brand Name:Infineon Technologies

Model Number:FM24CL16B-GTR

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:Macronix

Model Number:MX29GL256FHXFI-90Q

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F080 is packaged in 40-pin TSOP or 44-...

Place of Origin:PHILIPPINE

Brand Name:Brilliance Semiconductor

Model Number:BS62LV1027PCP70

...Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S32800J-7BLI

... and outputs signals refer to the rising edge of the clock input. GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S16400J-7TL

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit...

Categories:FPGA Configuration and Control Memory

Country/Region:china

... ferroelectric random access memory (F-RAM) with an I²C interface, manufactured by Infineon Technologies. It offers high endurance, fast write speeds, and low power consumption, making it ...