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All dynamic random access memory wholesalers & dynamic random access memory manufacturers come from members. We doesn't provide dynamic random access memory products or service, please contact them directly and verify their companies info carefully.
Total 3364 products from dynamic random access memory Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:MT53E1G32D2NP-053 RS WT:C Place of Origin:CN Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT41K512M16VRN-107 IT:P Place of Origin:CN ... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Alliance Memory, Inc. Model Number:AS7C34098A-10JIN ...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C256B-15PIN ... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time • Low power consumption – Active: |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C1024B-12TJCN ... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C1024B-12JCN ... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Original Factory Model Number:CY15B102QN-50LHXI Place of Origin:CN ...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI Clock Frequency 50 MHz Access Time 8 ns Voltage - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Alliance Memory, Inc. Model Number:AS7C316098A-10BIN ...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C256A-10TCN ...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C256A-12JCN ...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS7C4096A-12JIN ... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Pin ... |
Sanhuang electronics (Hong Kong) Co., Limited
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Model Number:M29W640FB Place of Origin:original factory ... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7 |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Alliance Memory, Inc. Model Number:AS6C4016-55ZIN ..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby current : 4 µA(TYP.) Single 2.... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:NUMONYX Model Number:M29W640GT70NA6E Place of Origin:Original ... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:CYPRESS Model Number:FM24CL04B Place of Origin:Original Factory ... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Anterwell Model Number:A623308M-70SF Place of Origin:original factory ...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Original Factory Model Number:S70GL02GT12FHIV10 Place of Origin:CN ...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S70GL02GS11FHI010 Place of Origin:CN ... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:original Model Number:FM1608-120 Place of Origin:Original Factory ... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:original Model Number:FM24C256-SE Place of Origin:original ... - 256KB FRAM SERIAL MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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