dynamic random access memory

Brand Name:Macronix

Model Number:MX30LF1G08AA-TI

Place of Origin:original

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a write endurance of up to 100K cycles. The

Place of Origin:PHILIPPINE

Brand Name:SPANSION

Model Number:S29GL512P12TFIV20

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AAT

Place of Origin:CN

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequency: 133 MHz Organisation: 256 M x 8 Features Of

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:CYPRESS

Model Number:CY62137FV30LL-55ZSXE

Place of Origin:original

...-power, high-performance Static Random Access Memory (SRAM) that features a 1.8V operating voltage and a 3V data retention voltage. It is available in 4Mb and 8Mb densities with a low-power ...

Brand Name:CYPRESS

Model Number:FM25V10-GTR

Place of Origin:original

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice for ...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:Original Factory

Model Number:S80KS5122GABHI020

Place of Origin:CN

...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range -

Brand Name:Micron Technology Inc.

Model Number:MT41K128M8DA-107:J

Place of Origin:original

... of 1.8V to 3.6V • Dual power supply of 1.7V to 1.95V for core and I/O • 1.8V I/O support • Power-down and deep power-down modes • Fast random read access •

Brand Name:GigaDevice Semiconductor (HK) Limited

Model Number:GD25LQ64CSIG

Place of Origin:Multi-origin

Product Listing: GD25LQ64CSIG Flash Memory Chips Features: • 8Mb of dual-voltage Flash memory • Operating voltage: 1.8V - 3V • Page size: 256 bytes • Random read access time: 70ns • High speed programming • Low power consumption • Single power supply ...

Brand Name:GigaDevice Semiconductor (HK) Limited

Model Number:GD25LQ128DSIG

Place of Origin:Multi-origin

Product Listing: GD25LQ64CSIG Flash Memory Chips Features: • 8Mb of dual-voltage Flash memory • Operating voltage: 1.8V - 3V • Page size: 256 bytes • Random read access time: 70ns • High speed programming • Low power consumption • Single power supply ...

Brand Name:Micron Technology Inc.

Model Number:MT46V64M8P-5B IT:J

Place of Origin:Multi-origin

...Support for SSTL_18, SSTL_15 and SSTL_12 I/O standards - Fast page mode for higher random read speeds - 100MHz burst read capability - Low power consumption - Lead Free and RoHS compliant How to buy >>> • Contact us by ...

Brand Name:ASLI

Model Number:ES-10

Place of Origin:CHINA

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