power transistor data sheet

Brand Name:Hua Xuan Yang

Model Number:AP8205S

Place of Origin:ShenZhen China

...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor...

Brand Name:Mitsubishi

Model Number:RA03M8087M-101

Place of Origin:JP

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to

Brand Name:ON / ST / FSC

Model Number:TIP142

Place of Origin:Original Factory

...Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors...

Brand Name:Infineon

Model Number:IKW20N60T

Place of Origin:Original Factory

IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE ...

Brand Name:ON

Model Number:FGH60N60SMD

Place of Origin:Original

Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs ...

Brand Name:Mitsubishi

Model Number:RA03M8087M-101

Place of Origin:JP

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor...

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

...300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:AP6H06S

Place of Origin:ShenZhen China

...Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:AP6H06S

Place of Origin:ShenZhen China

...Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power...

Brand Name:NXP/AMPLEON

Model Number:BLF178XR,112

Place of Origin:USA

...power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %: Output power = 1400 W Power gain = 28 dB ...

Brand Name:Silicon Labs

Model Number:SI4355-B1A-FMR

Place of Origin:Multi-origin

... RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • RoHS Compliant Specifications: • Frequency Range: 400 MHz - 2.7 GHz • Output Power: >20W...

Brand Name:Silicon Labs

Model Number:SI4010-C2-GTR

Place of Origin:Multi-origin

SI4010-C2-GTR RF Power Transistor Product Features: • 900 MHz to 2.7 GHz Frequency Range • 10 W Output Power at 2.4 GHz • 30 V Nominal Drain Voltage • 6.8 dB Typical Gain at 2.4 GHz • 56% Typical Efficiency at 2.4 GHz • Rugged and Reliable Applications: • ...

Brand Name:Silicon Labs

Model Number:SI4421-A1-FTR

Place of Origin:Multi-origin

Product Listing: SI4421-A1-FTR Parameters: • Type: RF Power Transistor • Technology: GaN • Package Type: SMD • Operating Voltage: 40V • Operating Frequency: 0.5 - 3 GHz • Output Power: 50W • Power Gain: > 12.5 dB • Supply Current: < 0.7A • Efficiency: > 80...