power transistor data sheet

Brand Name:Hua Xuan Yang

Model Number:AP10N10DY

Place of Origin:ShenZhen China

...Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:15P03C2

Place of Origin:ShenZhen China

...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power...

Brand Name:Hua Xuan Yang

Model Number:AP10N10DY

Place of Origin:ShenZhen China

...Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor...

Brand Name:Infineon / CYPRESS

Model Number:CYW20736A1KML2GT

Place of Origin:original

...Power Transistors High Performance Excellent Reliability Package 32-VFQFN Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 Frequency 2.4GHz Serial Interfaces I²C, SPI, UART GPIO 14 Voltage - Supply 1.4V ~ 3.6V Operating Temperature -30°C ~ 85°C Mounting Type Surface Mount Package / Case 32-VFQFN Exposed Pad Supplier Device Package 32-QFN (5x5) CYW20736A1KML2GT RF Power Transistor...

Model Number:PBSS4160T,215

Place of Origin:CN

...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...

Brand Name:Original brand

Model Number:IGOT60R070D1AUMA1

Place of Origin:Original

... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Brand Name:Hua Xuan Yang

Model Number:AP10H03S

Place of Origin:ShenZhen China

... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 30V ID = 10A RDS(ON

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power

Brand Name:Hua Xuan Yang

Model Number:AP8205A

Place of Origin:ShenZhen China

... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 20V ID = 6A RDS(ON)

Brand Name:Original brand

Model Number:IGOT60R070D1AUMA1

Place of Origin:Original

... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Brand Name:Hua Xuan Yang

Model Number:AP10H03S

Place of Origin:ShenZhen China

... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 30V ID = 10A RDS(ON

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power

Brand Name:Hua Xuan Yang

Model Number:AP8205A

Place of Origin:ShenZhen China

... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 20V ID = 6A RDS(ON)

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...

Brand Name:IXYS

Model Number:IXFH160N15T2

Place of Origin:Original Factory

...Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power...

Brand Name:Silicon Labs

Model Number:SI4438-C2A-GMR

Place of Origin:Multi-origin

...Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency operation - Low output noise - Low distortion - Wide temperature range - Long-term stability Specifications: - Package: SMD 3-pin - Output Power: 150W - Frequency Range: 500MHz - 860MHz - Operating Temperature: -45°C to +85°C - Gain: 28.5dB - Efficiency: 53% - Power...

Brand Name:Silicon Labs

Model Number:SI4031-B1-FMR

Place of Origin:Multi-origin

...-FMR RF Power Transistor Product Specifications: • Maximum Frequency: 4GHz • Maximum Output Power: 22.5W • Maximum Gain: 15dB • Maximum Output Power @ 1dB Compression: 20W • Maximum Drain Efficiency: 42% • Input VSWR: 1.3:1 • Power Gain: 16dB...