power transistor data sheet

Brand Name:Analog Devices Inc.

Model Number:HMC1122LP4METR

Place of Origin:Multi-origin

...-power applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications such as cellular base stations, Wi-Fi, and

Brand Name:Analog Devices Inc.

Model Number:ADF5901WCCPZ

Place of Origin:Multi-origin

ADF5901WCCPZ RF Power Transistor High Output Power And Efficiency Product Listing: ADF5901WCCPZ RF Power Transistors Features: • Broadband Coverage from 2.3 to 2.7GHz • Output Power: 43.5dBm (400W) @ 2.5GHz • High Gain: 17.9dB @ 2.5GHz • High Efficiency...

Brand Name:Hua Xuan Yang

Model Number:30P03X TO-252

Place of Origin:ShenZhen China

...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide variety of applications. Mosfet Power Transistor General Features VDS=-30V,ID=-40A RDS(ON)<20mΩ@ VGS=10V RDS(ON)<32mΩ@ VGS=4.5V Mosfet Power Transistor Application ● Power...

Brand Name:Hua Xuan Yang

Model Number:30P03X TO-252

Place of Origin:ShenZhen China

...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide variety of applications. Mosfet Power Transistor General Features VDS=-30V,ID=-40A RDS(ON)<20mΩ@ VGS=10V RDS(ON)<32mΩ@ VGS=4.5V Mosfet Power Transistor Application ● Power...

Brand Name:Silicon Labs

Model Number:SI4438-B1C-FMR

Place of Origin:Multi-origin

...Power Transistor Product Overview: The SI4438-B1C-FMR is a high-performance RF power transistor designed for use in a wide range of applications, including base stations, portable radios, and broadband amplifiers. Featuring a high gain and low-noise figure, this device is capable of delivering up to 40 W of output power...

Brand Name:Silicon Labs

Model Number:SI4432-B1-FMR

Place of Origin:Multi-origin

...communication systems. This device is capable of delivering up to 25 watts of output power over a wide frequency range of 450MHz to 6.0GHz. The SI4432-B1-FMR features a rugged plastic package with excellent thermal performance and ...

Brand Name:Analog Devices Inc.

Model Number:HMC536LP2E

Place of Origin:Multi-origin

...Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios and VSATs. Features: • Gain: 14.5 dB • Power...

Brand Name:Hua Xuan Yang

Model Number:12P03C2

Place of Origin:ShenZhen China

...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less than the 200V Npn Power Transistor ...

Brand Name:Hua Xuan Yang

Model Number:AP5N10LI

Place of Origin:ShenZhen China

...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Complementary Power Transistors...

Brand Name:Hua Xuan Yang

Model Number:12P03C2

Place of Origin:ShenZhen China

...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less than the 200V Npn Power Transistor ...

Brand Name:Hua Xuan Yang

Model Number:AP5N10LI

Place of Origin:ShenZhen China

...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Complementary Power Transistors...

Brand Name:Hua Xuan Yang

Model Number:5N20DY TO-252

Place of Origin:ShenZhen China

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP30N10P

Place of Origin:ShenZhen China

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:5N20DY TO-252

Place of Origin:ShenZhen China

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP30N10P

Place of Origin:ShenZhen China

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP5N10SI

Place of Origin:ShenZhen China

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered...

Brand Name:Hua Xuan Yang

Model Number:AP5N10SI

Place of Origin:ShenZhen China

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered...

Brand Name:Silicon Labs

Model Number:SI4702-C19-GMR

Place of Origin:Multi-origin

SI4702-C19-GMR RF Power Transistors Product Overview: The SI4702-C19-GMR is a high performance RF power transistor designed for RF power amplifier applications in industrial and consumer applications. This device is suitable for applications such as ...

Brand Name:Silicon Labs

Model Number:SI4010-C2-GTR

Place of Origin:Multi-origin

..., and excellent ruggedness and reliability. The SI4010-C2-GTR is ideal for use in power amplifiers, switching circuits, and linear amplifiers. Features: - High Gain: up to 24 dB - High Efficiency: up to 40% - Wide Operating ...

Brand Name:Analog Devices Inc.Analog Devices Inc.

Model Number:AD8364ACPZ-REEL7

Place of Origin:Multi-origin

Product Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular and other wireless applications. Features...