random access memory ram

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E:E

Place of Origin:CN

...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 AIT:B

Place of Origin:CN

... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM -

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Original Factory

Model Number:H9HCNNNBKUMLHR-NMOR

Place of Origin:CN

H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200​ Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200​. Specification...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:Original Factory

Model Number:S70GL02GT12FHIV10

Place of Origin:CN

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory...

Brand Name:Original Factory

Model Number:S70GL02GS11FHI010

Place of Origin:CN

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,

Brand Name:Hynix

Model Number:Hynix Memory IC

Place of Origin:South Korea, China

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...

Brand Name:Micron

Model Number:Micron Memory IC

Place of Origin:United States

Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It...

Brand Name:Original Factory

Model Number:MT40A512M16LY-062E AUT:E

Place of Origin:CN

8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip​ Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank...

Brand Name:Original Factory

Model Number:MT40A1G16KH-062E AIT:E

Place of Origin:CN

... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16...

Brand Name:Original Factory

Model Number:S29GL256S90DHI020

Place of Origin:CN

...Memory IC FBGA64​ Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. Specification Of S29GL256S90DHI020 Part Number S29GL256S90DHI020 Memory Type Non-Volatile Memory...

Brand Name:Microchip Technology

Model Number:AT24CS08-STUM-T

Place of Origin:original

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interface and is capable of storing up to 1024 bytes of data. The device is organized as 128 pages of 8 bytes each and can be accessed using the device’s random access...

Brand Name:Original Factory

Model Number:S29GL256S10DHB023

Place of Origin:CN

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, ...

Brand Name:Original Factory

Model Number:S29GL01GS10FHI010

Place of Origin:CN

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one

Place of Origin:PHILIPPINE

Brand Name:Advanced Micro Devices

Model Number:AM28F010-90PC

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The

Place of Origin:PHILIPPINE

Brand Name:Macronix International

Model Number:MX29LV040TC-55

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is packaged in ...

Brand Name:Micron Technology Inc.

Model Number:MT41K128M16JT-125:K

Place of Origin:original

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns Why buy from us >>> Fast / Safely /

Brand Name:Alliance Memory, Inc.

Model Number:AS4C2M32SA-6TCN

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT4LC4M16R6TG-5

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096...