random access memory ram

Brand Name:Original Factory

Model Number:CY15B104QI-20LPXC

Place of Origin:CN

...MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of ...

Brand Name:CYPRESS

Model Number:FM25CL64B-GTR

Place of Origin:Original Factory In stock

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4016v1C-TI10

...RAM(3.3V Operating) Description: The K6R4016V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and

Brand Name:original

Model Number:FM24C256-SE

Place of Origin:original

...MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4008C1D-KI10

...RAM(5.0V Operating). Operated at Commercial and Quick Detail: 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory...

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

...-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as ...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...RAM Product Description The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

... MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It...

Place of Origin:PHILIPPINE

Brand Name:Ramtron International Corporation

Model Number:FM24C256-SE

...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories...

Brand Name:original

Model Number:FM25L256-G

Place of Origin:original

... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Place of Origin:PHILIPPINE

Brand Name:Ramtron International Corporation

Model Number:FM1608-120

...64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data ...

Brand Name:Diebold Nixdorf

Model Number:19063046000A 19-063046-000A

Place of Origin:China

...RAM MDL 128M*64 SDRAM D DDR2 19063046000A 19-063046-000A The Diebold IC MEM RAM MDL 128M*64 SDRAM D DDR2 refers to a specific memory module used in Diebold Nixdorf's equipment, such as automated teller machines (ATMs) or self-service kiosks. Here's what the different elements of the product name typically indicate: IC MEM RAM: This indicates that it is an integrated circuit (IC) memory module used for random access

Brand Name:Alliance Memory, Inc.

Model Number:AS7C34098A-10JIN

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...

Brand Name:Alliance Memory, Inc.

Model Number:AS7C256B-15PIN

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time • Low power consumption – Active:

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12TJCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Alliance Memory, Inc.

Model Number:AS7C1024B-12JCN

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications.

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Applications Of MT41K256M16TW-107 ...

Brand Name:CYPRESS

Model Number:FM25V10-GTR

Place of Origin:original

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice for applications ...